Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire

摘要

We report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip scanning tunneling microscopy (F-STM). It is found that after bending the nanowire with the F-STM the conductance is reduced by about five orders of magnitude. The cathodoluminescent spectra indicate that the ZnO nanowires contain a sizable amount of defects in the surface region, responsible for their conduction. It is suggested that the observed huge conductance changes are caused by the shifting of the surface defect states in the ZnO nanowires in response to the applied surface strain.