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Effective modification of indium tin oxide for improved hole injection in organic light-emitting devices

机译:有效修饰铟锡氧化物以改善有机发光器件中的空穴注入

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摘要

We demonstrate modification of the indium tin oxide (ITO) surface with an ultrathin layer of hexadecafluorocopper phthalocyanine (F_(16)CuPc) can significantly enhance hole injection as a result of the formation of an interfacial dipole layer. The dipole layer produces a surface potential shift, which reduces the hole injection energy barriers and thus improves the hole injection efficiency. The devices with anode modification exhibit significantly enhanced luminance efficiencies and dramatically decreased operation voltages, compared to devices with the bare ITO anode. The minimum turn-on voltage of 2.6 V and the maximum efficiency of 5.1 cd/A are achieved.
机译:我们证明了用十六烷基氟铜酞菁(F_(16)CuPc)超薄层修饰铟锡氧化物(ITO)表面可以显着增强空穴注入,这是由于形成了界面偶极层。偶极层产生表面电势漂移,这减小了空穴注入能垒,从而提高了空穴注入效率。与具有裸ITO阳极的设备相比,具有阳极改性的设备表现出显着增强的发光效率和显着降低的工作电压。最小的开启电压为2.6 V,最大效率为5.1 cd / A。

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