Low-voltage and high-gain pentacene inverters with plasma-enhanced atomic-layer-deposited gate dielectrics

摘要

The pentacene thin-film transistors with the plasma-enhanced atomic-layer-deposited 150 nm thick Al_2O_3 or 120 nm thick ZrO_2 have been operated at gate voltages between -3 and 3 V. The inverter with a ZrO_2 gate dielectric shows a gain of 49 and a full swing from supply voltage (V_(dd)) to 0 V, operating at input voltages (V_(in)) from 0 to -1 V and at V_(dd) of -1 V. The hysteresis observed in the voltage transfer characteristic of the inverter depends on the scan range of V_(in) applied to the driver transistor, regardless of the V_(dd) applied to the load transistor.