Direct evidence of N aggregation and diffusion in Au~+ irradiated GaN

摘要

A surface amorphized layer and a buried disordered structure were created in gallium nitride (GaN) irradiated using 1.0 MeV Au~+ ions to fluences of 25 and 70 Au~+m~2 at room temperature. Bubbles of N_2 gas within both the amorphized and disordered GaN are formed. A gradient profile with a lower N concentration in the amorphized region is observed, which provides direct evidence of N loss by diffusion in the Au~+ irradiated GaN. These results are important to understanding the amorphization processes in GaN and may have significant implications for the design and fabrication of GaN-based devices.