Thermal stability and band alignments for Ge_3N_4 dielectrics on Ge

摘要

Ge_3N_4 dielectrics were prepared on Ge surface by in situ direct atomic source nitridation. The thermal stability and band alignments for Ge_3N_4/Ge interfaces have been studied by using high-resolution x-ray photoemission spectroscopy. The in situ thermal treatment shows that Ge_3N_4 film has higher temperature thermal stability up to 550℃ in vacuum. The conduction- and valence-band offsets at Ge_3N_4/Ge interface are quite asymmetrical with the values of 2.22 and 1.11 eV, respectively.