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Charge-carrier mobility in an organic semiconductor thin film measured by photoinduced electroluminescence

机译:通过光致电致发光测量有机半导体薄膜中的载流子迁移率

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摘要

With existing methods it is difficult to measure the mobility of semiconducting thin films that have submicron thickness and submicrosecond charge-carrier transit time. To simplify these measurements we demonstrate a technique that is a combination of the time-of-flight and transient electroluminescence methods. The technique is fundamentally optical in that it decouples the carrier transient signal from the device charging circuit and hence removes the RC time constant constraint that limits existing methods. The technique was applied to measure electron mobility in a tris(8-hydroxyquinoline) aluminum (AlQ_3) thin film. Results agree well with mobility values obtained using other methods.
机译:利用现有方法,难以测量具有亚微米厚度和亚微秒电荷载流子通过时间的半导体薄膜的迁移率。为了简化这些测量,我们演示了一种将飞行时间和瞬态电致发光方法相结合的技术。该技术从根本上讲是光学的,因为它可以将载波瞬态信号与设备充电电路解耦,从而消除了限制现有方法的RC时间常数约束。该技术被用于测量三(8-羟基喹啉)铝(AlQ_3)薄膜中的电子迁移率。结果与使用其他方法获得的迁移率值非常吻合。

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