Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface

摘要

Calculated chemical equations using thermodynamics suggest that elemental Te~0 is easily induced during bromine-based etching process on the HgCdTe surface and the induced elemental Te~0 can be removed by chemical reaction with hydrazine, forming volatile H_2Te. X-ray photoelectron spectroscopy (XPS) confirmed these chemical reactions. The induced elemental Te~0 is believed to play a role as surface generation-recombination centers in CdTe/HgCdTe interface, which was confirmed by XPS, ideality factor, and energy-dispersive interface trap density (D_(it)) analyses.