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Improvement of the emission current from a cesiated metal-oxide-semiconductor cathode

机译:铯金属氧化物半导体阴极发射电流的改善

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We have reduced the work function of the gate electrode of a metal-oxide-semiconductor tunneling cathode by cesiation. After cesiation, there was a considerable increase in the emission current and a large number of electrons were detected at energies lower than the original vacuum level of the poly-Si gate electrode. These results indicate that almost all the tunneling electrons have energies lower than the original vacuum level of the gate electrode, and that after cesiation electrons initially prevented from being emitted by the original vacuum level were emitted, because of the reduced work function due to cesiation.
机译:我们通过铯降低了金属氧化物半导体隧穿阴极的栅电极的功函数。割裂后,发射电流有了很大的增加,并且以低于多晶硅栅电极原始真空度的能量检测到大量电子。这些结果表明,几乎所有的隧穿电子都具有低于栅电极的原始真空能级的能量,并且在铯原子化之后,由于铯原子化导致的功函数降低,最初被电子阻止发射的电子被发射。

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