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Photoluminescence of CdSe quantum dots and rods from buffer-layer-assisted growth

机译:缓冲层辅助生长引起的CdSe量子点和棒的光致发光

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摘要

The traditional colloidal routes of fabrication of Ⅱ-Ⅵ semiconductor quantum dots have been difficult to integrate with silicon technology. Here, we demonstrate that CdSe quantum dots and rods can be self-assembled and delivered in ultrahigh vacuum conditions on almost any substrate by means of buffer-layer-assisted growth (BLAG), where the buffer is thin solid Xe film. We determine the diffusivity of the particles on the buffer, and demonstrate the significance of the ionicity of the CdSe. Photoluminescence spectra are compared to the previous studies of colloidal CdSe structures. This study opens the door for the synthesis of tunable Ⅱ-Ⅵ heterostructures.
机译:传统的制备Ⅱ-Ⅵ族半导体量子点的胶体路线很难与硅技术相结合。在这里,我们证明了CdSe量子点和棒可以通过缓冲层辅助生长(BLAG)在超高真空条件下自组装并在几乎任何基板上输送,缓冲层是固态Xe薄膜。我们确定了缓冲液上颗粒的扩散率,并证明了CdSe离子化的重要性。将光致发光光谱与胶体CdSe结构的先前研究进行了比较。这项研究为可调谐的Ⅱ-Ⅵ异质结构的合成打开了大门。

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