Mean barrier height of Pd Schottky contacts on ZnO thin films

摘要

We have investigated the temperature dependence of the barrier height of high-quality Pd Schottky contacts on (0001)-oriented ZnO thin films by temperature-dependent current-voltage and capacitance-voltage (CV) measurements. The films have been grown by pulsed-laser deposition. The effective Schottky barrier height Φ_(B, eff) deduced from the current-voltage measurements was evaluated by considering a Gaussian barrier height distribution with a standard deviation σ around a mean barrier height Φ_(B, m). We determined Φ_(B, m) = (1.16 ± 0.04) eV which agrees well with the value of 1.14 eV determined by CV measurements. The standard deviation is determined to be (134 ± 10) meV.