GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power

摘要

We report on GaSb-based 2. X μm diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. 2.3 μm ridge-waveguide lasers with the improved epitaxial design showed, besides the narrow beam profile in the fast axis, an excellent slow axis beam quality [M~2< 1.1 up to 70 mW, continuous wave (cw)]. 2.0 μm broad-area lasers with the improved waveguide too, exhibit a maximum cw-output power of 1.96 W.