Band alignment between (100) Si and amorphous LaAlO_3, LaScO_3, and Sc_2O_3: Atomically abrupt versus interlayer-containing interfaces

摘要

Incorporation of a ～1-nm-thick SiO_x interlayer is found to have little effect on the band alignment between a (100) Si substrate and amorphous LaAlO_3, LaScO_2, and Sc_2O_3 insulators. All of these materials are found to give the same band offsets irrespective of differences in their composition, even when contacting Si directly. This suggests that the bulk electron states and properties of the semiconductor and insulator layer play a much more important role in determining the band lineup at the interface than any dipoles related to particular bonding configurations encountered in the transition region between Si and these oxides.