High Q (33 000) all-epitaxial microcavity for quantum dot vertical-cavity surface-emitting lasers and quantum light sources

摘要

Data are presented on the modal and lasing characteristics of a new type of vertical-cavity surface-emitting laser that uses an intracavity mesa to confine the optical mode, with the mesa also confining the quantum dot active region. The quantum dot active region is lithographically isolated within the intracavity mesa using etching and epitaxial regrowth to form an all-epitaxial microcavity light source. Cavity quality factors as high as 33 000 are measured, and ground state lasing is demonstrated with a single quantum dot active layer for temperatures up to ～ 110 K.