High-efficiency polymer light-emitting diodes based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] with plasma-polymerized CHF_3-modified indium tin oxide as an anode

摘要

We demonstrate that introducing a thin CF_x film formed by plasma polymerization of CHF_3 on an indium tin oxide (ITO) anode surface for a polymer light-emitting diode with the structure, ITO/CF_x/poly[2-methoxy-5-(2-ethylhexyloxy)-1 ,4-phenylene vinylene](MEH-PPV)/Ca/Al, can lead to a high device performance (5.1 cd/A and 24 000 cd/m~2). The high device performance can be attributed to a better balance between hole and electron fluxes, resulting from a formation of interfacial dipole at the CF_x/MEH-PPV interface to provide a hole blocking effect and an enhancement of electron/hole recombination.