Structural and compositional investigation of yttrium-doped HfO_2 films epitaxially grown on Si (111)

摘要

Cubic phase yttrium-doped HfO_2 (YDH) ultrathin films were grown on Si (111) substrates by molecular beam epitaxy. Thorough structural and morphological investigations by x-ray scattering and transmission electron microscopy reveal that the YDH thin films are epitaxially grown on the Si substrates with (111)_(YDH)‖(111)_(Si) and [101]YDHII[110]_(Si). The interface between YDH and Si is atomistic sharp and free of interfacial layer. We have also determined the yttrium content of YDH films to be 19% by using anomalous x-ray diffraction (AXD) across Y k edge and angle resolved x-ray photoelectron spectroscopy (AR-XPS). The agreement between the AXD and AR-XPS results manifests that the incorporated Y atoms homogeneously substitute Hf atoms in the crystalline lattice and form a substitutional solid solution.