Carrier transport mechanisms of the writing and the erasing processes for Al/ZnO nanoparticles embedded in a polyimide layer/p-Si diodes

摘要

Capacitance-voltage measurements on Al/ZnO nanocrystals embedded in polyimide (PI) layer/p-Si diodes at 300 K showed a metal-insulator-semiconductor behavior with a flatband voltage shift. Current-voltage (I-V) measurements on the diodes showed that carrier transport processes were attributed to the Poole-Frenkel effect and to thermionic emission. Possible carrier transport mechanisms of the writing and the erasing processes for the Al/ZnO nanocrystals embedded in PI layer/p-Si diodes are described on the basis of the I-V results.