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Integration of In_2O_3 nanoparticle based ozone sensors with GalnN/GaN light emitting diodes

机译:基于In_2O_3纳米粒子的臭氧传感器与GalnN / GaN发光二极管的集成

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There is a high demand for compact low-cost ozone sensors. It has been shown recently that In_2O_3 nanolayers can act as ozone sensitive films activated at room temperature by ultraviolet light. In the present work, the authors integrate ultrathin layers of In_2O_3 nanoparticles and a GaInN/GaN based blue light emitting diode (LED) on a single sensor chip. The integrated sensor was found to be sensitive to O_3 concentrations as low as ~40 ppb. These results demonstrate that by integrating GaInN/GaN based blue LEDs and metal oxide sensing layers back to back on a single chip, compact and robust gas sensors can be realized.
机译:对于紧凑型低成本臭氧传感器有很高的需求。最近已经显示出In_2O_3纳米层可以充当在室温下被紫外线激活的臭氧敏感膜。在当前的工作中,作者在单个传感器芯片上集成了In_2O_3纳米粒子的超薄层和基于GaInN / GaN的蓝色发光二极管(LED)。发现集成传感器对低至约40 ppb的O_3浓度敏感。这些结果表明,通过在单个芯片上背靠背集成基于GaInN / GaN的蓝色LED和金属氧化物传感层,可以实现紧凑而坚固的气体传感器。

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