GaN BASED LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTURING LIGHT-EMITTING DIODE STRUCTURE ELEMENT

摘要

PROBLEM TO BE SOLVED: To develop a GaN based light-emitting diode chip involving improved current expansion at a slight additional manufacturing cost, and to provide a method of manufacturing a light-emitting diode structure element having this type of chip.SOLUTION: The GaN based light-emitting diode chip has a transparent first layer where a p-type contact layer is applied to the p-side, and a reflective second layer applied onto the first layer. The method of manufacturing a light-emitting diode structure element includes: a step for epitaxial growing a layer; a step for applying a p-type contact layer to the p-side of an epitaxy continuous layer; a step for removing a substrate from the epitaxy continuous layer; a step for applying a contact metallization part to a partial region on the major surface of the epitaxy continuous layer; and a step for applying a light-emitting diode chip to the chip mounting surface of an LED casing, in the conductor path in the LED casing or on an electrical connection frame along with the p-type contact layer having a binding capacity toward the chip mounting surface.