Analysis for crystal structure of Bi(Fe,Sc)O_3 thin films and their electrical properties

摘要

Thin films of Bi(Fe_(1-x)Sc_x)O_3 (BFSO) system were fabricated on (111)Pt/TiO_2/SiO_2/(100)Si substrates by chemical solution deposition to improve the electrical resistivity by substituting electrically unstable Fe~(3+) cations for stable Sc~(3+) cations. A single phase of perovskite was obtained in the range of x=0-0.30, in which selective replacement of Fe~(3+) and Sc~(3+) was confirmed in x=0-0.15 by using Raman measurement. The leakage current density of the BFSO films was reduced by increasing x. A well-saturated polarization-electric field hysteresis loop was obtained for BFSO films with x=0.15, showing remanent polarization of approximately 35 μC/cm~2.