Ⅰ-Ⅴ characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions

摘要

Ⅰ-Ⅴ characteristics of single electron tunneling from a symmetric and an asymmetric double-barrier tunneling junction (DBTJ) were examined. A single Au nanoparticle was trapped in nanogap whose size was precisely controlled using a combination of electron beam lithography and molecular ruler technique. Though the symmetric junction showed a monotonic rise with a bias beyond the Coulomb gap voltage, the asymmetric junction showed Coulomb staircases. The capacitance of the junction estimated from the fitting curves using the Coulomb conventional theory was consistent with the capacitance calculated from the observed structure. The authors quantitatively found the correlation between the electrical and structural properties of DBTJ.