Low threshold, high gain AlGaInAs quantum dot lasers

摘要

The properties of AlGaInAs quantum dot (QD) lasers are reported and compared to GaInAs QD lasers emitting at a similar wavelength (～920 nm). It is found that Al_(0.15)Ga_(0.23)In_(0.62)As QD lasers show an ～2.1 times higher material gain and lower threshold current densities than Ga_(057)In_(0.43)As lasers (a factor of ～1.4 for 1.0 mm long and 100 μm wide devices). Both laser samples display comparable high internal quantum efficiencies of 0.79 (AlGaInAs) and 0.83 (GaInAs). The AlGaInAs devices exhibit a high characteristic temperature of 174 K between 15 and 85℃.