Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

摘要

The photo-leakage-current (I_(PLC)) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (E_a) of a-Si: H(:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H(:F). Experimental results show that the I_(PLC) of a-Si:H(:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H(:F) material. However, the higher I_(PLC) is observed in the hole conduction region, resulted from the larger E_a in the a-Si:H(:F) TFTs.