Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes

摘要

The authors measured Aharonov-Bohm resistance oscillations [Phys. Rev. 115, 485 (1959)] in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition the authors observe resistance oscillations as a function of front gate bias at zero magnetic field. They authors discuss the results in light of spin interference in the ring and possible applications to spintronics.