Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates

摘要

In this work, monolayers of the redox-active molecules, with cationic- accessible states, were incorporated on p- and n-type silicons of varying doping concentrations. The redox voltages and kinetics were found to be strongly dependent on the silicon doping concentrations, and ambient light in case of n-Si substrate, while there was no significant impact of substrate doping concentration or ambient light in case of p-Si substrate. These results suggest the redox energy states in the molecule align within the valence band of the silicon substrate. Based on this, a model for electronic coupling and charge transfer at the molecule-semiconductor interfaces is proposed.