The authors report single mode stimulated emission from optical pumping of prismlike gallium nitride (GaN) with a side length of 0.75 μm. The cavities were formed by reaction-rate-limited photoetching that preserved the nonpolar {1010} or {1120} facets. They were characterized by an average quality factor above 10~3 and an equivalent facet reflectivity exceeding 98%, which allowed field amplification by repeated internal reflections in the transverse plane and field polarization along the c axis. Slight spectral blueshift (0.35 nm) and narrowing in linewidth (～0.4 nm) were observed with increase of pump intensity. These observations manifested resonant coupling of the band edge emission to a single mode of the prismlike GaN cavity.
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