Resistance switching of copper doped MoO_x films for nonvolatile memory applications

摘要

Nonvolatile and reversible resistance switching of copper doped MoO_x film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 10~6 cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25 h at 85℃. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoO_x film from the bottom electrode.