机译:改善非易失性存储器应用的Au掺杂镍铁氧体磁性薄膜的单极电阻切换特性
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Magnetic films and multilayers; Scanning and transmission electron microscopy; Electronic transport; Magnetic measurements;
机译:改善非易失性存储器应用的Au掺杂镍铁氧体磁性薄膜的单极电阻切换特性
机译:非易失性存储应用中ZnO薄膜的单极电阻切换特性
机译:用于非易失性存储应用的非晶氧化镓薄膜的单极电阻切换行为
机译:高k三元稀土氧化物Lahoo3薄膜的单极电阻切换行为,用于非易失性存储器应用
机译:基于开关过程的建模控制非易失性铪 - 氧化物电阻开关存储器的变异性
机译:具有高开/关比的Hf0.5Zr0.5O2薄膜的增强的单极电阻开关特性
机译:用于非易失性存储器的Ce和mn共掺杂BiFeO3薄膜的电阻转换特性