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Synthesis and optical properties of InN nanowires and nanotubes

机译:InN纳米线和纳米管的合成及光学性质

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摘要

InN nanowires and faceted hexagonal InN nanotubes are synthesized by catalyst-free chemical vapor deposition at different temperatures. Both have the single crystalline wurtzite structure and grow along the c axis. Different growth dynamics are suggested for the difference in morphology. Observations of phonon-plasmon coupled modes in their Raman scattering suggest of high electron concentrations. Absorption edges in their optical spectfa have energies slightly higher than 1 eV, showing blueshifts from the fundamental band gap of ~0.7 eV, recently observed in epitaxial films. The shifts are argued to be the result of the Burstein-Moss effect.
机译:InN纳米线和多面六角形InN纳米管是通过在不同温度下无催化剂的化学气相沉积法合成的。两者都具有单晶纤锌矿结构并沿c轴生长。对于形态差异,建议使用不同的生长动力学。声子-等离子体激元耦合模式在拉曼散射中的观察表明,电子浓度很高。它们在光学光谱中的吸收边缘的能量略高于1 eV,显示出从〜0.7 eV的基带隙发生蓝移,最近在外延膜中观察到。这些变化被认为是布尔斯坦-莫斯效应的结果。

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