Observation of strain and temperature induced changes in the band structure of thin La_(0.8)MnO_(3-δ) films

摘要

Mn K-edge resonant inelastic x-ray scattering measurements were performed on films of La_(0.8)MnO_(3-δ). The measurements reveal that strain causes large shifts of the bands above the Fermi level. The Mn 3d band switches from a narrow upshifted peak at high temperature to a broad bulklike band at low temperature in ultrathin films. The strain induced switching behavior opens the possibility of tuning the transition to higher temperatures for device applications in this class of manganite materials.