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Origin of negative differential resistance in molecular junctions of Rose Bengal

机译:孟加拉玫瑰分子连接处负微分电阻的起源

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摘要

Negative differential resistance (NDR) is tuned at the junctions of electronically different dimers and trimers of Rose Bengal. Isolated molecule did not show any NDR. But it was induced to show double and triple NDRs with large peak to valley ratio (1.8-3.1) at 300 K by varying number of neighbors and charging them by an electrical pulse. One could destroy or regenerate NDR by separating them or bringing together by a scanning tunneling microscope tip. NDR was also independent of polaronic nature. Bits 1 and 0 for cationic NDR (in dimer) and 0, 1, 2, and 3 for dianionic NDR (trimer) were written in an atomic scale junction. Importance of junction electronics and effective exposure is revealed.
机译:在电子不同的玫瑰红三聚体和三聚体的交界处,可以调节负差分电阻(NDR)。分离的分子未显示任何NDR。但是,通过改变邻居数并通过电脉冲对它们进行诱导,在300 K时显示出具有大峰谷比(1.8-3.1)的两倍和三倍NDR。可以通过分离NDR或通过扫描隧道显微镜尖端将NDR聚集在一起来破坏或再生NDR。 NDR也独立于极化性质。阳离子NDR(二聚体中)的位1和0,以及阴离子NDR(三聚体)中的0、1、2和3,都写在原子级结中。揭示了结电子器件和有效暴露的重要性。

著录项

  • 来源
    《Applied Physics Letters》 |2007年第2期|p.023512.1-023512.3|共3页
  • 作者单位

    International Center for Young Scientists, National Institute of Material Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

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