Reduced Boron Lateral Ion Channeling In Very Short P-channel Transistors By Switching From 〈110〉 To 〈100〉 Channel Orientation

摘要

The on-current of p-channel transistors fabricated on (100) Si substrate can be easily increased by switching from 〈110〉 to 〈100〉 channel orientation because of faster hole transport. In this paper, we pointed out that there is also a reduction in the gate-to-source/drain overlap, resulting in an increase in the effective channel length for p-channel transistors. Our experimental observation can be explained by a reduction in boron lateral ion channeling due to this switch.