Similarities In The Kinetics Of Photocrystallization And Photodarkening In A-se

摘要

The onset time of photocrystallization (PC) as a function of temperature in a-Se films designed for avalanche photodetectors is explored using Raman scattering experiments. The PC onset time τ_(on) is compared to the time-constant τ_(IPD) for irreversible photodarkening (IPD) studied in earlier work. Both τ_(on) and τ_(IPD) exhibit activated thermal behavior mediated by an energy barrier E_B ～0.7-0.95 eV. We suggest that the formation kinetics of PC and IPD in α-Se are governed by the same energy surface and configuration changes, occurring via photoinduced defects during the primary stage of crystallization.