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Bulk Dense Fine-grain (1-x)bisco_3-xpbtio_3 Ceramics With High Piezoelectric Coefficient

机译:压电系数高的块状密实(1-x)bisco_3-xpbtio_3陶瓷

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High density fine grain (1-x)BiScO_3-xPbTiO_3 ceramics were successfully prepared by two-step sintering and their ferroelectric properties were investigated. Experimental evidence indicates the existence of a morphotropic phase boundary at the composition x=0.635, which exhibits a piezoelectric coefficient d_(33) of 700 pC/N at room temperature, significantly higher than the reported values to date. Furthermore, a higher electromechanical coupling factor Kp=0.632 and a larger remnant polarization P_r=47.3 μC/cm~2 were obtained. The paraelectric-to-ferroelectric phase transition occurs at 446 ℃, slightly lower than in the coarse grain ceramics with a similar composition, suggesting a grain size effect. The local effective piezoelectric coefficient d_(33)~* was estimated to be 795 pC/N at 2.29 V, measured by scanning probe microscopy. Further atomic force microscope observation revealed the existence of 90° domains of about 60-70 nm in width, confirming the previous results that small domain structure enhances the piezoelectric properties.
机译:通过两步烧结成功制备了高密度细晶粒(1-x)BiScO_3-xPbTiO_3陶瓷,并研究了它们的铁电性能。实验证据表明在组分x = 0.635处存在一个同相相界,该相界在室温下的压电系数d_(33)为700 pC / N,明显高于迄今报道的值。此外,获得了更高的机电耦合因子Kp = 0.632和更大的剩余极化P_r =47.3μC/ cm〜2。顺电至铁电的相变发生在446℃,比具有类似成分的粗晶陶瓷要低一些,表明存在晶粒尺寸效应。通过扫描探针显微镜测量,在2.29V下的局部有效压电系数d_(33)〜*估计为795pC / N。进一步的原子力显微镜观察揭示了存在约60-70 nm宽度的90°畴,证实了先前的结果,即小畴结构可增强压电性能。

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