Structure and interface bonding of GeO_2/Ge/ln_(0.15)Ga_(0.85)As heterostructures

摘要

The structural and chemical details of GeO_2/Ge layers grown on In_(0.15)Ga_(0.85) As substrates by molecular beam deposition were studied in situ by diffraction and spectroscopic techniques. The formation of semiconductor-oxygen bonds at the Ge/In_(0.15)Ga_(0.85)As interface, which may play a decisive role in dictating the quality of the Ge passivation, was assessed after using two different surface preparations, namely Ar sputtering and atomic hydrogen cleaning.