Low-voltage C_(60) organic field-effect transistors with high mobility and low contact resistance

摘要

State-of-the-art C_(60) organic transistors are reported here by engineering the essential electrode/ semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the width-normalized contact resistance (R_CW) at the electrode/semiconductor interface could be reduced to a constant value of 2 kΩ cm at a gate-source voltage (V_(GS)) of 2.6 V, for devices with channel lengths ranging from 25 to 200 μm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm~2/Vs at V_(GS)＜ 5 V is found independent of channel length within the studied range.