A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

摘要

Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AIN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the N-ZnO growth. LEDs showed a turn-on voltage of 2.5 V and a room temperature electroluminescence (EL) centered at 510 nm. A blueshift and narrowing of the EL peak with increasing current was attributed to bandgap renormalization. The results indicate that hybrid LED structures could hold the prospect for the development of green LEDs with superior performance.