Time-resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

摘要

The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around 1.55 μm, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300 K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated nonradiative recombination up to room temperature.