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首页> 外文期刊>Applied Physicsletters >Femtosecond acceleration of electrons under high electric fields in bulk GaAs investigated by time-domain terahertz spectroscopy
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Femtosecond acceleration of electrons under high electric fields in bulk GaAs investigated by time-domain terahertz spectroscopy

机译:时域太赫兹光谱研究块状砷化镓高电场下电子的飞秒加速

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摘要

We have investigated terahertz emission from undoped bulk GaAs photoexcited by femtosecond laser pulses under strong bias electric fields, F, up to 300 kV/cm. The initial positive signal in the terahertz waveforms, which is usually interpreted as electron acceleration in the Γ-valley, is found to increase with increasing F for F < 50 kV/cm, but to start decreasing gradually above 50 kV/cm. The observed behavior suggests that the effective acceleration mass of electrons significantly increases with increasing F. The mass enhancement is due most likely to band mixing between the Γ- and the higher satellite valleys under high electric fields.
机译:我们已经研究了在高达300 kV / cm的强偏置电场F下,飞秒激光脉冲对未掺杂的块状GaAs光激发产生的太赫兹发射。在F <50 kV / cm时,随着F的增加,太赫兹波形中的初始正信号通常被解释为Γ谷中的电子加速度,但随着50 F / cm的增加而开始逐渐减小。观察到的行为表明,电子的有效加速质量随F的增加而显着增加。质量增强最可能是由于在高电场下Γ-和较高卫星谷之间的能带混合。

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