Effects Of Reoxidation On Band Alignment In N-incorporated Sion Films As A Function Of Sequential Thermal Annealing In No And Nh_3

摘要

The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and NH_3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and NH_3 were less than those observed for the nitrided film prepared by thermal annealing in only NH_3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.