Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 μm: Fabrication and characterization

摘要

In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55 μm, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu/Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55 μm is experimentally demonstrated.