Electroluminescence of SnO_2/p-Si heterojunction

摘要

Polycrystalline SnO_2 film of tetragonal rutile structure with an optical band gap of 3.9 eV was formed by oxidation process at 1000 ℃ on electron beam evaporation deposited Sn film. Room temperature electroluminescence from the SnO_2/p-Si heterojunction