Internal photoemission spectroscopy of [TaN/TaSiN] and [TaN/TaCN] metal stacks on SiO_2 and [HfO_2/SiO_2] dielectric stack

摘要

There is an intense search for metal gates for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (Φ_0) at its interface with a gate dielectric must be known to select a suitable metal. In this letter, internal photo