Near-zero IR transmission in the metal-insuiator transition of VO_2 thin films

摘要

Vanadium dioxide films have been prepared with different thicknesses using radio-frequency magnetron sputtering technique followed by postdeposition annealing in oxygen ambient. Films with a thickness of 300 nm show a switching efficiency of ～74% and most importantly with a near-zero infrared transmission in the switched state. As the film thickness decreases, the inherent transmission in the switched state increases along with reduced switching efficiencies.