Formation and electrical bistability properties of ZnO nanoparticles embedded in polyimide nanocomposites sandwiched between two C_60 layers

摘要

The electrical bistability of the memory device based on ZnO nanoparticles embedded in a polyimide (PI) layer was investigated. Transmission electron microscopy and selected area electron diffraction pattern measurements showed that ZnO nanocrystals were formed inside the PI layer. Current-voltage measurements on Al/C_60/ZnO nanoparticles embedded in PI layer/C_60/indium tin oxide structures at 300 K showed a current bistability with a large on/off ratio of 10~4. The current-voltage hysteresis characteristics at negative voltages could be modified by varying the applied positive erasing voltage. The memory device fabricated utilizing ZnO nanoparticles embedded in a PI layer exhibited excellent environmental stability at ambient conditions.