Temperature dependence of the band gap of ZnSe_(1-x)O_x

R. Broesler; E. E. Haller; W. Walukiewicz; T. Muranaka; T. Matsumoto; Y. Nabetani

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Temperature dependence of the band gap of ZnSe_(1-x)O_x

机译：ZnSe_（1-x）O_x带隙的温度依赖性

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We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe_(1-x)O_x films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band.

机译：我们使用光致发光光谱研究了分子束外延生长的ZnSe_（1-x）O_x膜（x = 0-0.021）的带隙对温度的依赖性，该带隙的温度依赖性从15 K到280K。随着氧浓度的增加，可以用高度局限的氧缺陷态与导带的扩展态之间的反交叉相互作用定量地解释。

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来源
《Applied Physicsletters》 |2009年第15期|151907.1-151907.3|共3页
作者
R. Broesler; E. E. Haller; W. Walukiewicz; T. Muranaka; T. Matsumoto; Y. Nabetani;
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作者单位

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

Department of Electrical Engineering, University of Yamanashi, Takeda 4-3-11, Kofu 400-8511, Japan;

Department of Electrical Engineering, University of Yamanashi, Takeda 4-3-11, Kofu 400-8511, Japan;

Department of Electrical Engineering, University of Yamanashi, Takeda 4-3-11, Kofu 400-8511, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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入库时间 2022-08-18 03:19:59

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Temperature dependence of the band gap of ZnSe_(1-x)O_x

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