Modulating the surface states of electric field assembled CuO nanowires by electrochemical deposition method

摘要

In this paper, the electrochemical deposition and anneal method has been developed to modulate the contact performance of electric field assembled CuO nanowires. After modulation, the current increases about two orders. The I-V curves indicate that before and after modulation, the current transport properties are both dominated by the reverse current of Schottky barriers under image force model. The current increase results from the formation of another current pathway, i.e., the CuO nanowire@nanoparticles/Pt electrode structure, in which the surface states in metal-semiconductor interface are largely reduced by passivating dangling bonds, and the barrier height decreases about 105 meV.