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Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment

机译:通过降低的功函数和通过氢等离子体处理提高的电导率来增强ZnO薄膜的场发射

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摘要

The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO:H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO:H films.
机译:通过H / O等离子体处理通过磁控溅射沉积的ZnO膜。发现在H-等离子体处理之后,ZnO膜的场发射(FE)特性得到显着改善,而在O-等离子体处理之后,ZnO膜的场发射(FE)特性略有恶化。有限元特性的改善归因于功函数的降低和ZnO:H薄膜电导率的提高。导电原子力显微镜用于研究等离子体处理对ZnO纳米电导率的影响,这些发现与FE数据密切相关,并有助于更清晰地描述ZnO:H薄膜的电子发射。

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  • 来源
    《Applied Physicsletters》 |2009年第26期|64-66|共3页
  • 作者单位

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083,People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083,People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083,People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083,People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083,People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083,People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083,People's Republic of China;

    Lab of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, People's Republic of China;

    Lab of Thin Film Materials, College of Materials Science and Engineering,Beijing University of Technology, Beijing 100022, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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