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机译:用于高温金属氧化物半导体场效应晶体管应用的(La_2O_3)_(0.5)(SiO_2)_(0.5)/ SiO_2 / GaN叠层的能带排列和改善的泄漏性能
Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
机译:用于GaN金属氧化物半导体场效应晶体管的高质量SiO_2 / Al_2O_3栅堆叠
机译:非真空超声喷涂热解沉积Ti0.5Al0.5O-介电AlGaN / GaN / Si金属氧化物半导体异质结构场效应晶体管
机译:Si表面氮化对(La_2O_3)_(0.5)(SiO_2)_(0.5)高k栅介电膜的界面结构和电性能的影响
机译:4H-SIC堆叠电介质的原子层沉积LA_2O_3 /热氮化SiO_2的电性能(0001)
机译:0.1μmAlGaN / GaN高电子迁移率晶体管(HEMT)工艺的改进大信号模型及其在W波段实用单片微波集成电路(MMIC)设计中的应用
机译:0.1μmAlgan/ GaN高电子迁移率(HEMTS)工艺的改进的大信号模型及其在W频段中实际单片微波集成电路(MMIC)设计中的应用