Characterization of near-infrared n-type β-FeSi_2/p-type Si heterojunction photodiodes at room temperature

摘要

n-type β-FeSi_2/p-type Si heterojunctions were fabricated from β-FeSi_2 films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of - 1 V under illumination by a 6 mW, 1.31 μm laser. The estimated detectivity was 1.5 × 10~9 cm (Hz)~(1/2) W at 1.31 μm. The results suggest that the β-FeSi_2/Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.