Manipulation of spin polarization by charge polarization in GaMnN ferromagnetic resonant tunneling diode

摘要

We have investigated the dependence of spin polarization on charge polarization at room temperature in GaMnN-based ferromagnetic resonant tunneling structures with different Mn doping positions. Our results show that compared to the nonpolarization case, the degree of spin polarization can be enhanced by two to four times and resonant current intensity increases about fourfold at a moderate polarized-charge concentration of 10~(12)/cm~2. In addition, the dipole right case in magnetic resonant diodes has stronger impact on spin tunneling than the opposite one. These results demonstrate that tailoring charge polarization is a feasible way to tune electron spin polarization in piezoelectric-type ferromagnetic heterostructures.